IPD100N06S403ATMA1

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Manufacturer Part	IPD100N06S403ATMA1
Manufacturer	Rochester Electronics
Description	MOSFET N-CH 60V 100A TO252-31
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	IPD100N06S403ATMA1 PDF

Availability

InStock	16,526
UnitPrice	$ 0.60000

IPD100N06S403ATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPD100N06S403ATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Bulk
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:	128 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	10.4 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	150W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3-11
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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