DF11MR12W1M1B11BOMA1

DF11MR12W1M1B11BOMA1

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Manufacturer Part DF11MR12W1M1B11BOMA1
Manufacturer Rochester Electronics
Description IGBT MODULE
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet DF11MR12W1M1B11BOMA1 PDF

Availability

InStock 83
UnitPrice $ 120.00000

DF11MR12W1M1B11BOMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

DF11MR12W1M1B11BOMA1 Specifications

Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:50A
Rds On (Max) @ Id, Vgs:23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:3950pF @ 800V
Power - Max:20mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module

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Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.


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